In this paper, the authors present a line of newly developed high performance SiC power modules, HT-2000, for military systems and applications. The HT-2000 series of modules are rated to 1200V, are operational to greater than 100A, can perform at temperatures in excess of 250 °C, and can be constructed with SiC MOSFETs, JFETs, or BJTs. The newly developed module implements a novel ultra-low parasitic packaging approach that enables high switching frequencies in excess of 100 kHz, and weighs in at just over 100 grams (offering >4× mass reduction in comparison with industry standard power brick packaging technology). The paper discusses testing results of these modules in actual system applications, including: (a) complete static characterization vs. temperature, and (b) switching performance.